trap state
英 [træp steɪt]
美 [træp steɪt]
网络 陷阱态; 捕捉态; 俘获状态
双语例句
- Important registers to look for when debugging through signals are the GPRs, instruction pointer ( NIP), machine state register ( MSR), trap, data address register ( DAR), and so on.
在调试信号时，需要查看的一些重要寄存器包括GPR、指令指针（NIP）、机器状态寄存器（MSR）、Trap、数据地址寄存器（DAR）等等。 - On the contrary, When collective consciousness makes turbulence, the body and mind will trap in a state of unhealthiness, unhappiness and unpleasure.
相反的，当意识不和谐时，身心就处在不健康、不幸的、不喜悦的状态。 - Using Ion Trap to Prepare and Measure the Quantum State
利用离子阱制备与测量量子态 - The bulk trap state exists in interface of ZnO varistor, and the interfacial electronic transport of ZnO varistor can be interpreted by double Schottky barrier model with correction of carrier bulk trap state.
价电子谱发现：室温下仅纯ZnO费米能级附近有载流子分布，这表明：压敏电阻界面有陷阱态，氧化锌压敏电阻界面电输运特性需用载流子陷阱对双肖特基势垒进行补充。 - Low-level Trap in China s Agriculture& A Super-stable State
我国农业的低水平陷井：一种超稳态 - The Study of Network Trap Based on Extended Finite State Machine
基于扩展有限状态机的诱骗服务器关键技术研究 - In this paper, we present the experimental methods to determine the trap parameters in the silicon bulk from non-steady state ⅰ-ⅴ characteristics on NOS structures.
本文报导了从MOS结构非稳态Ⅰ-Ⅴ特性求得硅体陷阱参数的实验方法。 - An effective way of decreasing bulk electron trap density and interface state density is put forward.
提出降低体电子陷阱密度和界面态密度的有效途径。 - The measurements of the trap parameters in the silicon bulk from non-steady state I-V characteristics on MOS Structures
从MOS非稳态Ⅰ-Ⅴ特性测量硅体陷阱参数 - The high detection efficiency in the ion trap system implies that the mixed state geometric phases proposed here can be easily tested.
囚禁离子的高效检测性意味着本文所研究的混合态几何相位能够被验证。 - Study on the Trap State of BaTiO_3 Semiconducting Ceramics On Network State Equation
钛酸钡PTC热敏电阻陶瓷表面态浅析网络状态方程研究 - A composite trap evaluation method for oil pool formed by active and quiet state factors
圈闭成藏动、静态综合评价法 - Stress field is the power of structural deformation and movement, which causes the change of geologic environment, trap conditions and stress state.
引起地质环境、圈闭条件、应力状态改变的动力是构造应力场。 - The results demonstrated that the Ohmic contact annealing is one of the most important factors that have an influence on the density of interface traps, the time constants and the trap state energy of AlGaN/ AlN/ GaN heterostructures.
研究结果表明，欧姆接触退火导致的金属原子扩散是影响界面陷阱态密度、时间常数及陷阱态能级等参数的重要因素。 - Use the ion trap system to design phase covariant quantum real state quantum cloning machine.
利用离子阱系统设计实现相位协变与实数态量子克隆的方案。